ccd image sensors s11071/s10420-01 series improved etaloning characteristics, high-speed type and low noise type available www.hamamatsu.com 1 the s11071/s10420-01 series are back-thinned ccd image sensors designed for spectrometers. two types consisting of a high-speed type (s11071 series) and low noise type (s10420-01 series) are available with improved etaloning charac- teristics. the s11071/s10420-01 series offer nearly at spectral response characteristics with high quantum ef ciency from the uv to near infrared region. improved etaloning characteristics high sensitivity over a wide spectral range and nearly at spectral response characteristics high full well capacity and wide dynamic range (with anti-blooming function) high ccd node sensitivity: 8 v/e - (s11071 series) 6.5 v/e - (s10420-01 series) pixel size: 14 14 m selection guide type no. number of total pixels number of effective pixels image size [mm (h) mm (v)] readout speed max. (mhz) suitable driver circuit s11071-1004 1044 22 1024 16 14.336 0.224 10 c11288 s11071-1006 1044 70 1024 64 14.336 0.896 s11071-1104 2068 22 2048 16 28.672 0.224 s11071-1106 2068 70 2048 64 28.672 0.896 s10420-1004-01 1044 22 1024 16 14.336 0.224 0.5 c11287 s10420-1006-01 1044 70 1024 64 14.336 0.896 s10420-1104-01 2068 22 2048 16 28.672 0.224 s10420-1106-01 2068 70 2048 64 28.672 0.896 improved etaloning characteristics etaloning is an interference phenomenon that occurs when the light incident on a ccd repeatedly re ects between the front and back surfaces of the ccd while being attenuated, and causes alternately high and low sensitivity. when long-wavelength light enters a back- thinned ccd, etaloning occurs due to the relationship between the silicon substrate thickness and the absorption length. the s11071/ s10420-01 series back-thinned ccds have achieved a signi cant im- provement in etaloning by using a unique structure that is unlikely to cause interference. etaloning characteristics (typical example) wavelength (nm) relative sensitivity (%) 900 1000 950 960 970 980 990 930 910 940 920 (ta=25 c) etaloning-improved type previous type 0 40 30 20 10 50 60 70 80 90 100 110 kmpdb0284eb spectrometers, etc. features applications
ccd image sensors s11071/s10420-01 series 2 structure parameter s11071 series s10420-01 series pixel size (h v) 14 14 m vertical clock phase 2-phase horizontal clock phase 4-phase output circuit two-stage mosfet source follower one-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outline) window material * 1 quartz glass * 2 cooling non-cooled * 1: t empor ary window type (ex: s11071-1106n, s10420-1106n-01) is available upon request. * 2: resin sealing absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature * 3 topr -50 - +50 c storage temperature tstg -50 - +70 c output transistor drain voltage s11071 series vod -0.5 - +25 v s10420-01 series -0.5 - +30 r eset dr ain vol tage vrd -0.5 - +18 v output ampli er return v oltage vret -0.5 - +18 v over ow drain voltage vofd -0.5 - +18 v v ertical input source voltage visv -0.5 - +18 v horizontal input source voltage vish -0.5 - +18 v over ow gate voltage vofg -10 - +15 v vertical input gate voltage vig1v, vig2v -10 - +15 v horizontal input gate vol tage vig1h, vig2h -10 - +15 v summing gate voltage vsg -10 - +15 v output gate vol tage vog -10 - +15 v reset gate voltage vrg -10 - +15 v transfer gate voltage vtg -10 - +15 v vertical shift register clock voltage vp1v, vp2v -10 - +15 v horizontal shift register clock voltage vp1h, vp2h vp3h, vp4h -10 - +15 v * 3: p ackage temper ature note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. operating conditions (mpp mode, ta=25 c) parameter symbol s11071 series s10420-01 series unit min. typ. max. min. typ. max. output transistor drain voltage vod 12 15 18 23 24 25 v reset drain voltage vrd 14 15 16 11 12 13 v over ow drain voltage vofd 11 12 13 11 12 13 v over ow gate voltage vofg 0 13 14 0 12 13 v output gate voltage vog 4 56456 v substrate voltage vss - 0 - - 0 - v output ampli er return voltage * 4 vret - 1 2 v test point input source visv, vish - vrd - - vrd - v vertical input gate vig1v, vig2v -9 -8 - -9 -8 - v horizontal input gate vig1h, vig2h -9 -8 - -9 -8 - v vertical shift register clock voltage high vp1vh, vp2vh 4 68468 v low vp1vl, vp2vl -9 -8 -7 -9 -8 -7 horizontal shift register clock voltage high vp1hh, vp2hh vp3hh, vp4hh 468468 v low vp1hl, vp2hl vp3hl, vp4hl -6 -5 -4 -6 -5 -4 summing gate voltage high vsgh 4 68468 v low vsgl -6 -5 -4 -6 -5 -4 reset gate voltage high vrgh 468468 v low vrgl -6 -5 -4 -6 -5 -4 transfer gate voltage high vtgh 468468 v low vtgl -9 -8 -7 -9 -8 -7 external load resistance rl 2.0 2.2 2.4 90 100 110 k * 4: output ampli er return voltage is a positive voltage with respect to substrate voltage, but the current ows in the direction of ow out of the sensor.
ccd image sensors s11071/s10420-01 series 3 electrical characteristics (ta=25 c) electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol s11071 series s10420-01 series unit min. typ. max. min. typ. max. signal output frequency * 5 fc - 5 10 - 0.25 0.5 mhz vertical shift register capacitance -1004(-01) c p1v , c p2v - 200 - - 200 - pf -1006(-01) - 600 - - 600 - -1104(-01) - 400 - - 400 - -1106(-01) - 1200 - - 1200 - horizontal shift register capacitance -1004(-01)/-1006(-01) c p1h , c p2h c p3h , c p4h -80- -80- pf -1104(-01)/-1106(-01) - 160 - - 160 - summing gate capacitance c sg -10- -10-pf reset gate capacitance c rg -10- -10-pf transfer gate capacitance -1004(-01)/-1006(-01) c tg -30- -30- pf -1104(-01)/-1106(-01) - 60 - - 60 - charge transfer ef ciency* 6 cte 0.99995 0.99999 - 0.99995 0.99999 - - dc output level * 5 vout 7 8 9 17 18 19 v output impedance * 5 zo - 0.3 - - 10 - k power consumption * 5 * 7 p- 75 --4-mw *5: the v alues depend on the load resistance. (s11071 series: v od =15 v, r l =2.2 k , s10420-01 series: v od =24 v, r l =100 k ) * 6: charge transfer ef ciency per pixel, measured at half of the full well capacity * 7: power consumption of the on-chip ampli er plus load resistance parameter symbol s11071 series s10420-01 series unit min. typ. max. min. typ. max. saturation output voltage vsat - fw sv - - fw sv - v full well capacity vertical fw 50 60 - 50 60 - ke - horizontal 150 200 - 250 300 - ccd node sensitivity * 8 sv 7 8 9 5.5 6.5 7.5 v/e - dark current* 9 ds - 50 500 - 50 500 e - /pixel/s readout noise * 10 nr - 23 28 - 6 15 e - rms dynamic range * 11 line binning dr 6520 8700 - 41700 50000 - - spectral response range - 200 to 1100 -- 200 to 1100 -nm photoresponse nonuniformity * 12 prnu - 3 10 - 3 10 % *8: the v alues depend on the load resistance. (s11071 series: v od =15 v, r l =2.2 k , s10420-01 series: v od =24 v, r l =100 k ) * 9: dark current is reduced to half for every 5 to 7 c decrease in temperature. * 10: s11071 series (temperature: 25 c): fc=2 mhz, s10420-01 series (temperature: -40 c): fc=20 khz * 11: dynamic range = full well capacity / readout noise * 12: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 660 nm) fixed pattern noise (peak to peak) signal 100 [%] photoresponse nonuniformity =
ccd image sensors s11071/s10420-01 series 4 spectral response (without window) * 13 dark current vs. temperature spectral transmittance characteristic of window material kmpdb0303ea * 13: spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. wavelength (nm) (typ. ta=25 c) quantum efficiency (%) 0 100 80 60 40 20 1200 200 400 600 800 1000 temperature ( c ) dark current (e - /pixel/s) 0.01 100 (typ.) 10 1 0.1 3020 -50 -30-40 -20 -10 100 wavelength (nm) transmittance (%) (typ. ta=25 c) 0 100 80 60 40 20 1100 100 300 400 200 500 600 700 800 900 1000 kmpdb0316ea kmpdb0304ea
ccd image sensors s11071/s10420-01 series 5 kmpdc0343eb kmpdc0269ec device structure (conceptual drawing of top view in dimensional outline) s11071 series s10420-01 series effective pixels effective pixels horizontal shift register thinning thinning 23 22 21 20 19 18 17 16 1 2 6 7 8 9 11 12 14 15 5 64 4 3 2 12345 1024 24 2 n signal output 4-bevel 2-bevel 13 4 blank pixels 2 n signal output 4 blank pixels 6-bevel 6-bevel 3 4 5 10 v=16, 64 h=1024, 2048 note: when viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). however, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. to prevent this, provide light shield on that area as needed. horizontal shift register note: when viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). however, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. to prevent this, provide light shield on that area as needed. effective pixels effective pixels horizontal shift register thinning thinning 23 22 21 20 19 18 17 16 1 2 6 7 8 9 11 12 14 15 5 64 4 3 2 12345 1024 24 2 n signal output 4-bevel 2-bevel 13 4 blank pixels 2 n signal output 4 blank pixels 6-bevel 6-bevel 3 4 5 10 v=16, 64 h=1024, 2048 horizontal shift register
ccd image sensors s11071/s10420-01 series 6 timing chart (line binning) kmpdc0270ed integration time (shutter has to be open) (shutter has to be closed) (shutter has to be closed) p1v p2h p3h readout period vertical binning period tpwv tovr tov r p2v, tg p4h, sg p1h rg os tovrh tpwh, tpws tpwr 4...1043 1044: s11071/s10420-1004, -1006 4...2067 2068: s11071/s10420-1104, -1106 d3...d10, s1...s1024, d11...d18: s11071/s10420-1004, -1006 s1...s2048 : s11071/s10420-1104, -1106 d1 d2 d19 d20 12 123 3...21 22 16 + 6 (bevel): s11071/s10420-1004, -1104 3...69 70 64 + 6 (bevel): s11071/s10420-1006, -1106 parameter symbol s11071 series s10420-01 series unit min. typ. max. min. typ. max. p1v, p2v, tg pulse width * 14 tpwv 1 8 - 6 8 - s rise and fall times * 14 tprv, tpfv 20 - - 20 - - ns p1h, p2h, p3h, p4h pulse width * 14 tpwh 50 100 - 1000 2000 - ns rise and fall times * 14 tprh, tpfh 10 - - 10 - - ns pulse overlap time tovrh 25 50 - 500 1000 - ns duty ratio * 14 - 405060405060 % sg pulse width * 14 tpws 50 100 - 1000 2000 - ns rise and fall times * 14 tprs, tpfs 10 - - 10 - - ns pulse overlap time tovrh 25 50 - 500 1000 - ns duty ratio * 14 - 405060405060 % rg pulse width tpwr 5 50 - 100 1000 - ns rise and fall times tprr, tpfr 5 - - 5 - - ns tg-p1h overlap time tovr 1 2 - 1 2 - s * 14: s ymmetrical clock pulses should be o verlapped at 50% of maximum pulse amplitude.
ccd image sensors s11071/s10420-01 series 7 kmpda0223ee dimensional outline (unit: mm) index mark 38.10 0.4 24 11 2 13 27.94 0.3 a 3.3 0.35 0.25 -0.03 +0.05 10.41 0.25 10.03 0.3 b photosensitive area type no. s11071/ s10420 -1004(-01) 14.336 (h) 14.336 (h) 28.672 (h) 28.672 (h) 0.224 (v) ab 0.896 (v) 0.224 (v) 0.896 (v) -1006(-01) -1104(-01) -1106(-01) 1.47 0.18 2.54 0.13 0.46 0.05 1.27 0.2 1.27 0.25 3.0 0.5 photosensitive surface index mark
ccd image sensors s11071/s10420-01 series 8 pin connections pin no. symbol function remark (standard operation) 1 os output transistor source r l =2.2 k 2 od output transistor drain +15 v 3 og output gate +5 v 4 sg summing gate same pulse as p4h 5 vret output ampli er return +1 v 6 rd reset drain +15 v 7 p4h ccd horizontal register clock-4 8 p3h ccd horizontal register clock-3 9 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) -8 v 12 ig1h test point (horizontal input gate-1) -8 v 13 ofg over ow gate +13 v 14 ofd over ow drain +12 v 15 ish test point (horizontal input source) connect to rd 16 isv test point (vertical input source) connect to rd 17 ss substrate gnd 18 rd reset drain +15 v 19 ig2v test point (vertical input gate-2) -8 v 20 ig1v test point (vertical input gate-1) -8 v 21 p2v ccd vertical register clock-2 22 p1v ccd vertical register clock-1 23 tg transfer gate same pulse as p2v 24 rg reset gate pin no. symbol function remark (standard operation) 1 os output transistor source r l =100 k 2 od output transistor drain +24 v 3 og output gate +5 v 4 sg summing gate same pulse as p4h 5 ss substrate gnd 6 rd reset drain +12 v 7 p4h ccd horizontal register clock-4 8 p3h ccd horizontal register clock-3 9 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) -8 v 12 ig1h test point (horizontal input gate-1) -8 v 13 ofg over ow gate +12 v 14 ofd over ow drain +12 v 15 ish test point (horizontal input source) connect to rd 16 isv test point (vertical input source) connect to rd 17 ss substrate gnd 18 rd reset drain +12 v 19 ig2v test point (vertical input gate-2) -8 v 20 ig1v test point (vertical input gate-1) -8 v 21 p2v ccd vertical register clock-2 22 p1v ccd vertical register clock-1 23 tg transfer gate same pulse as p2v 24 rg reset gate s11071 series s10420-01 series
ccd image sensors s11071/s10420-01 series 9 driver circuits for ccd image sensor (s10420-01/s11071 series) c11287/c11288 [sold separately] the c11287, c11288 are driver circuits designed for hamamatsu ccd image sensors s10420-01/s11071 series. the c11287, c11288 can be used in spectrometers, etc. when combined with the ccd image sensor. features built-in 14-bit a/d converter interface to computer: usb 2.0 power supply: usb bus power operation (c11287) dc+5 v operation (c11288) precautions (electrostatic countermeasures) ? handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ? avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ? provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. ? ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measur es stated above. implement these measures according to the amount of damage that occurs. c11287 c11288 related information precautions ? notice ? image sensors/precautions technical information ? fft-ccd area image sensor/technical information www.hamamatsu.com/sp/ssd/doc_en.html
ccd image sensors s11071/s10420-01 series cat. no. kmpd1120e08 feb. 2014 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. t ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. t he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of february, 2014. 10
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